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People have come to expect that anything involving a capital “G” or a capital “O” will be exemplary, and that anything that contains them in the same sentence is somehow more superior.. Deliveries of Chitrakoot and Surat in the C.P.S. The absence of the two aforesaid services has been felt in. “Difficulties arising out of the non-receipt of the allocation of Naxalite funds for a long period of time prompted. “We see the Air India disaster, though extraordinarily tragic, as the.The present invention relates to an electron beam exposure apparatus used in the manufacture of integrated circuits in ultrafine integrated circuits for which a further higher definition is desired, and to a scanning type electron beam exposure apparatus. In particular, the present invention relates to an electron beam exposure apparatus used in the manufacture of thin-film transistors (hereafter referred to as “TFT”) integrated circuits, large-area liquid crystal display panels, or electronic circuit substrates.
In recent years, the development of micro-fabrication techniques of integrated circuits has been remarkable. A typical example of the techniques is electron beam exposure. In this technique, a photo-resist pattern is formed on a silicon wafer to be exposed. Then, the electrons are projected onto the silicon wafer through an electron beam projection lens to expose the exposed wafer to the pattern. The fine pattern can be transferred to the silicon wafer by using this technique. To form a larger number of elements in a single wafer, the beam spot must be scanned. In order to facilitate the accurate scanning, the reduction in size of the beam spot is required. For this purpose, several tens of types of electron beam projection lenses have been developed.
A conventional electron beam projection lens is generally of a symmetrical type which consists of two or more pieces of magnetic poles in combination. In this type of projection lens, a beam spot of which diameter is 1/2 the thickness of the wafer is required in order to expose the wafer with accuracy. If the size of the beam spot is increased in order to obtain the high accuracy exposure, the mechanical strength of the projection lens is weakened. In addition, the diameters of the poles are larger. The larger the number of poles is, the higher the cost of the projection lens is.
In order to solve these problems, another type of electron beam projection lens is proposed. The lens has an asymmetric construction and is formed by combining with another magnetic pole